A Method for a GaN Vertical Microcavity Surface Emitting Laser (VCSEL) that is compatible with conventional LED processing

Attempts to commercialize GaN VCSELs have been unsuccessful to date due to the challenges of manufacturability of DBR mirrors, difficulties associated with current blocking, and the complexity of laser liftoff. The new process flow overcomes all three challenges enabling the manufacturing of IIINitride VCSEL without liftoff and with much reduced complexity and the possibility of on-wafer testing.